Photoelastic effect and optimal waveguide structure in InGaAsP/InP double heterostructures

Stress field profiles and dielectric constant variations in InGaAsP/InP double heterostructures caused by a 110 run thick W0.95Ni0.05 metal thin-film strain stripe are calculated. Both theoretical and experimental results demonstrate the form of the photoelastic waveguide structure in the InGaAsP/InP double heterostructures. For a 4 mum width W0.95Ni0.05 thin-film strain stripe, the difference between dielectric constants of the waveguide at the centre and the edge of the stripe is 9 x 10(-2) - 2 x 10(-2) in the depth range from 0.2 to 2 mum of the semiconductor. At a given depth, the width of the strain stripe for the optimal Traveguide structure is determined. The maximal change of dielectric constant for the waveguide is an inverse proportion of the depth.