Interface formation of Al2O3 on n-GaN(0001): Photoelectron spectroscopy studies

被引：12

作者：

Lewandkow, Rafal ^{[1
]}

Grodzicki, Milosz ^{[1
]}

Mazur, Piotr ^{[1
]}

Ciszewski, Antoni ^{[1
]}

机构：

[1] Univ Wroclaw, Inst Expt Phys, Pl M Borna 9, Wroclaw, Poland

来源：

SURFACE AND INTERFACE ANALYSIS | 2021年 / 53卷 / 01期

关键词：

Al2O3 thin films; Al2O3; n-GaN interface; n-GaN; photoelectron spectroscopy; semiconductor; valence band; CHEMICAL-VAPOR-DEPOSITION; ATOMIC LAYER DEPOSITION; THIN-FILM TRANSISTORS; GAN; SURFACE; ENERGY; GROWTH; HETEROSTRUCTURE; SILICON; SI;

D O I：

10.1002/sia.6886

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Al2O3 insulator layers were deposited step by step by the physical vapor deposition (PVD) method onto gallium nitride in the wurtzite form, n-type and (0001)-oriented. The substrate surface and the early stages of Al2O3/n-GaN(0001) interface formation were characterized in situ under ultra-high vacuum conditions by X-ray and ultraviolet photoelectron spectroscopy (XPS, UPS). The electron affinity (EA) of the substrate cleaned by annealing was 3.6 eV. Binding energies of the Al 2p (76.0 eV) and the O 1s (532.9 eV) confirmed the creation of the Al(2)O(3)compound in the deposited film for which the EA was 1.6 eV. The Al(2)O(3)film was found to be amorphous with a bandgap of 6.9 eV determined from the O 1s loss feature. As a result, the calculated Al2O3/n-GaN(0001) valence band offset (VBO) is -1.3 eV and the corresponding conduction band offset (CBO) 2.2 eV.

引用

页码：118 / 124

页数：7

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