PROCEEDINGS OF PROGRESS IN ELECTROMAGNETICS RESEARCH SYMPOSIUM (PIERS 2012)
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2012年
关键词:
DISTORTION;
CIRCUIT;
D O I:
暂无
中图分类号:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号:
0808 ;
0809 ;
摘要:
This study proposes a 2.4 GHz class-A single stage power amplifier, whose linearity performance is enhanced by using ATF501P8 pHEMT transistor. For improving linearity performance of power amplifier a nonlinear diode-based power amplifier linearization technique has been applied which component values of linearizer circuit is optimized. Optimum linearized power amplifier can transmit 26.45 dBm output power for 15 dBm input power with 11.45 dB transducer power gain and 31.089% power added efficiency.
机构:
Univ Calif San Diego, Dept Elect & Comp Engn, La Jolla, CA 92093 USA
Apple Inc, San Diego, CA 92121 USAUniv Calif San Diego, Dept Elect & Comp Engn, La Jolla, CA 92093 USA
Rabet, Bagher
Asbeck, Peter M.
论文数: 0引用数: 0
h-index: 0
机构:
Univ Calif San Diego, Dept Elect & Comp Engn, La Jolla, CA 92093 USAUniv Calif San Diego, Dept Elect & Comp Engn, La Jolla, CA 92093 USA