Resonant-tunneling diodes with emitter prewells

被引:26
|
作者
Boykin, TB [1 ]
Bowen, RC
Klimeck, G
Lear, KL
机构
[1] Univ Alabama, Dept Elect & Comp Engn, Huntsville, AL 35899 USA
[2] CALTECH, Jet Prop Lab, Pasadena, CA 91109 USA
[3] Colorado State Univ, Dept Elect & Comp Engn, Ft Collins, CO 80523 USA
关键词
D O I
10.1063/1.124675
中图分类号
O59 [应用物理学];
学科分类号
摘要
Resonant-tunneling diodes (RTDs) incorporating an emitter prewell structure are studied both theoretically and experimentally in order to investigate the utility of the emitter region as a device design parameter. The experiments show a tendency for peak bias, current, and the peak-to-valley ratio to increase for wider prewells, behavior likewise seen in both very simple and detailed calculations. Both the simple and more complete models point to interactions between states associated with the prewell and the main quantum well as the reasons for the increase in peak current. These results suggest design guidelines to affect peak bias, current, or the peak-to-valley ratio of RTDs. (C) 1999 American Institute of Physics. [S0003-6951(99)01435-7].
引用
收藏
页码:1302 / 1304
页数:3
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