A Single-Ended TG Based 8T SRAM Cell With Increased Data Stability and Less Delay

被引：0

作者：

Tripathy, Dhananjaya ^{[1
]}

Manasneha, Tarangini ^{[1
]}

Das, Varun ^{[1
]}

机构：

[1] Silicon Inst Technol, Dept AE&I, Bhubaneswar, Orissa, India

来源：

2017 2ND IEEE INTERNATIONAL CONFERENCE ON RECENT TRENDS IN ELECTRONICS, INFORMATION & COMMUNICATION TECHNOLOGY (RTEICT) | 2017年

关键词：

single-ended; TG based 8T; SRAM; data stability; delay; transmission gates;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A single-ended TG based 8-transistor (8T) static random access memory (SRAM) cell having high data stability and reduced delay is presented. The use of feedback cutting scheme reduces the read disturbance and provides better control. The employment of transmission gates (TG) as pass transistors offers less delay in comparison to the conventional CMOS logic. The results after simulation show the delay time to be 191.67 ps. The area and power consumption were found to be 36.380 mu m(2) and 5.105 mu W respectively. The cell was implemented using Cadence UMC 180 nm technology.

引用

页码：1282 / 1285

页数：4

共 41 条

[1] A Single-Ended With Dynamic Feedback Control 8T Subthreshold SRAM Cell
Kushwah, C. B.
Vishvakarma, S. K.
IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS, 2016, 24 (01) : 373 - 377
[2] Single-Ended 8T SRAM cell with high SNM and low power/energy consumption
Mohagheghi, Javad
Ebrahimi, Behzad
Torkzadeh, Pooya
INTERNATIONAL JOURNAL OF ELECTRONICS, 2023, 110 (10) : 1733 - 1755
[3] A Novel Single Ended 8T SRAM with Improved Noise Margins and Stability
Narayan, Jay
Sharma, R. K.
2014 RECENT ADVANCES IN ENGINEERING AND COMPUTATIONAL SCIENCES (RAECS), 2014,
[4] LEAKAGE IMMUNE SINGLE ENDED 8T SRAM CELL FOR ULTRA-LOW POWER MEMORY DESIGN
Pahuja, Hitesh
Tyagi, Mintu
Singh, Balwinder
Panday, Sudhakar
JOURNAL OF ENGINEERING SCIENCE AND TECHNOLOGY, 2019, 14 (02) : 629 - 645
[5] Secure and Reliable Single-Ended 10T SRAM Cell
Sharma, Ayan
Naz, Syed Farah
Shah, Ambika Prasad
8TH IEEE ELECTRON DEVICES TECHNOLOGY & MANUFACTURING CONFERENCE, EDTM 2024, 2024, : 574 - 576
[6] Stability and leakage characteristics of novel conducting PMOS based 8T SRAM cell
Chung, Yeonbae
INTERNATIONAL JOURNAL OF ELECTRONICS, 2014, 101 (06) : 831 - 848
[7] A CNTFET based stable, single-ended 7T SRAM cell with improved write operation
Sachdeva, Ashish
Sharma, Kulbhushan
Bhargava, Anuja
Abbasian, Erfan
PHYSICA SCRIPTA, 2024, 99 (03)
[8] A single ended, single port configuration based 9 T SRAM cell for stability enhancement
Singhal, Vansh
Rawat, Bhawna
Mittal, Poornima
Kumar, Brijesh
PHYSICA SCRIPTA, 2023, 98 (11)
[9] Dual-Threshold Single-Ended Schmitt-Trigger Based SRAM Cell
Sreenivasan, Divya
Purushothaman, Devika
Pande, Kirti S.
Murty, N. S.
2016 IEEE INTERNATIONAL CONFERENCE ON COMPUTATIONAL INTELLIGENCE AND COMPUTING RESEARCH, 2016, : 677 - 680
[10] A Single-Ended Read Decoupled 9T SRAM Cell for Low Power Applications
Mansore, S. R.
Gamad, R. S.
Mishra, D. K.
2017 3RD IEEE INTERNATIONAL SYMPOSIUM ON NANOELECTRONIC AND INFORMATION SYSTEMS (INIS), 2017, : 220 - 223

← 1 2 3 4 5 →