Production and investigation of AgIn5S8/(InSe, GaSe) heterojunctions

被引：22

作者：

Bodnar', IV ^{[1
]}

Gremenok, VF

Rud', VY

Rud', YV

机构：

[1] Belarus State Univ Informat Sci & Radio Elect, Minsk 220027, BELARUS

[2] Byelarussian Acad Sci, Inst Solid State & Semicond Phys, Minsk 220072, BELARUS

[3] St Petersburg State Tech Univ, St Petersburg 195251, Russia

[4] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

来源：

SEMICONDUCTORS | 1999年 / 33卷 / 07期

关键词：

Thin Film; Evaporation; Pulse Laser; Magnetic Material; Vapor Phase;

D O I：

10.1134/1.1187773

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

It is shown that photosensitive AgIn5S8/(InSe, GaSe) heterojunctions can be fabricated using bulk crystals grown from the melt and from the vapor phase or polycrystalline thin films of the ternary compound prepared by pulsed laser evaporation. The spectral curves of the photosensitivity of the heterojunctions are investigated as a function of the photodetection geometry. It is concluded that the resulting structure have a promising potential as wideband and selective photodetectors. (C) 1999 American Institute of Physics. [S1063-7826(99)01007-8].

引用

页码：740 / 743

页数：4

共 13 条

[1] Bodnar I. V., 1996, CRYST RES TECHNOL, V31, P261
[2] GREMENOK VF, 1996, CRYST RES TECHNOL, V31, P485
[3] MEKHTIEV NM, 1978, SOV PHYS SEMICOND+, V12, P924
[4] NEGAMI T, 1998, 5 INT C POLYSE 98 PO, P18
[5] Orlova NS, 1998, INORG MATER+, V34, P7
[6] Rud VY, 1998, INST PHYS CONF SER, V152, P971
[7] A comprehensive characterization of the interfaces in Mo/CIS/CdS/ZnO solar cell structures
Schmid, D
Ruckh, M
Schock, HW
[J]. SOLAR ENERGY MATERIALS AND SOLAR CELLS, 1996, 41-2 : 281 - 294
[8] SCHOCK HW, 1994, P 12 EUR PHOT SOL EN, P944
[9] SZE SM, 1981, PHYSICS SEMICONDUCTO
[10] CHARACTERIZATION OF HETEROEPITAXIAL CUIN3SE5 AND CUINSE2 LAYERS ON SI SUBSTRATES
TIWARI, AN
BLUNIER, S
FILZMOSER, M
ZOGG, H
SCHMID, D
SCHOCK, HW
[J]. APPLIED PHYSICS LETTERS, 1994, 65 (26) : 3347 - 3349

← 1 2 →