Noble-Metal-Free Memristive Devices Based on IGZO for Neuromorphic Applications

被引:39
|
作者
Pereira, Maria [1 ,2 ]
Deuermeier, Jonas [1 ,2 ]
Nogueira, Ricardo [1 ,2 ]
Carvalho, Patricia Almeida [3 ,4 ]
Martins, Rodrigo [1 ,2 ]
Fortunato, Elvira [1 ,2 ]
Kiazadeh, Asal [1 ,2 ]
机构
[1] Univ NOVA Lisboa, Fac Sci & Technol, Dept Mat Sci, i3N,CENIMAT, Campus Caparica, P-2829516 Caparica, Portugal
[2] Univ Nova Lisboa, CEMOP, Campus Caparica, P-2829516 Caparica, Portugal
[3] SINTEF, Mat Phys, N-0373 Oslo, Norway
[4] Univ Lisbon, Inst Super Tecn IST, CeFEMA, P-1049001 Lisbon, Portugal
来源
ADVANCED ELECTRONIC MATERIALS | 2020年 / 6卷 / 10期
关键词
amorphous In-Ga-Zn-O (a-IGZO); amorphous oxide semiconductors (AOS); artificial synapses; Internet of Things; memristive devices; POTENTIATION; PERFORMANCE; VOLTAGE; MEMORY; MODEL; TFTS;
D O I
10.1002/aelm.202000242
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Amorphous indium-gallium-zinc-oxide (a-IGZO) based memristive devices with molybdenum contacts as both top and bottom electrodes are presented aiming to be used in neuromorphic applications. Devices down to 4 mu m(2)are fabricated using conventional photolithography processes, with an extraordinary yield of 100%. X-ray photoelectron spectroscopy and transmission electron microscopy performed on the developed structures confirm the presence of a thin intermixed oxide layer (4-5 nm) containing Mo(6+)oxidation state at the interface with the bottom contact. This results in Schottky diode-like characteristics at the pristine state with a rectification ratio of 3 orders of magnitude. The devices have electroforming-free and area-dependent analog resistive switching properties. Temperature analysis of resistive switchingI-Vdata reveals barrier height variations of the junction. Several synaptic functions, such as synaptic potentiation and depression as response to programmed pulses, short- to long-term plasticity transition (STP to LTP) and "learning experience" properties are presented. The Mo/IGZO/Mo memristive device shows potential application of an electronic synapse for brain-inspired computing application. Integration in System-on-Panel architectures is possible at negligible cost, because all materials are used in commercial IGZO thin-film transistor fabrication.
引用
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页数:9
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