Doped Mott Insulators in (111) Bilayers of Perovskite Transition-Metal Oxides with a Strong Spin-Orbit Coupling

被引：65

作者：

Okamoto, Satoshi ^{[1
]}

机构：

[1] Oak Ridge Natl Lab, Mat Sci & Technol Div, Oak Ridge, TN 37831 USA

来源：

PHYSICAL REVIEW LETTERS | 2013年 / 110卷 / 06期

关键词：

PHYSICS; MODEL;

D O I：

10.1103/PhysRevLett.110.066403

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The electronic properties of Mott insulators realized in (111) bilayers of perovskite transition-metal oxides are studied. The low-energy effective Hamiltonians for such Mott insulators are derived in the presence of a strong spin-orbit coupling. These models are characterized by the antiferromagnetic Heisenberg interaction and the anisotropic interaction whose form depends on the d orbital occupancy. From exact diagonalization analyses on finite clusters, the ground state phase diagrams are derived, including a Kitaev spin liquid phase in a narrow parameter regime for t(2g) systems. Slave-boson mean-field analyses indicate the possibility of novel superconducting states induced by carrier doping into the Mott-insulating parent systems, suggesting the present model systems as unique playgrounds for studying correlation-induced novel phenomena. Possible experimental realizations are also discussed. DOI: 10.1103/PhysRevLett.110.066403

引用

页数：5

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