The synthesis, crystallization and subsequent phase separation of amorphous FeNiP in nanosized confinement is studied. Porous anodic aluminum oxide (AAO) could be utilized to control the regularity and shape of nanostructures via electrodeposition of amorphous FeNiP into the pores. An electrodeposited FeNiP film is analyzed as a reference system. Upon in situ annealing in the transmission electron microscope (TEM), the microstructural evolution is investigated. Calorimetry of the film shows a glass transition and crystallization which leads to a coarse grained structure. Crystallization of the nanowires yields a multilayered nanostructure, followed by a phase separation of FeNiP in multilayers of FeNi and FeNiP phases with interfaces perpendicular to the wire axis. Magnetic properties of the nanowire arrays have been analyzed using a Vibrating Sample Magnetometer (VSM).
机构:
Georgia Inst Technol, Microelect Res Ctr, Atlanta, GA 30332 USA
Univ S Florida, NNRC, Dept Elect Engn, Tampa, FL 33620 USAGeorgia Inst Technol, Microelect Res Ctr, Atlanta, GA 30332 USA
Aravamudhan, S.
Singleton, J.
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Los Alamos Natl Lab, NHMFL, Los Alamos, NM USAGeorgia Inst Technol, Microelect Res Ctr, Atlanta, GA 30332 USA
Singleton, J.
Goddard, P. A.
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Univ Oxford, Dept Phys, Clarendon Lab, Oxford OX1 3PU, EnglandGeorgia Inst Technol, Microelect Res Ctr, Atlanta, GA 30332 USA
Goddard, P. A.
Bhansali, S.
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Univ S Florida, NNRC, Dept Elect Engn, Tampa, FL 33620 USAGeorgia Inst Technol, Microelect Res Ctr, Atlanta, GA 30332 USA
机构:
Georgia Inst Technol, Microelect Res Ctr, Atlanta, GA 30332 USA
Univ S Florida, NNRC, Dept Elect Engn, Tampa, FL 33620 USAGeorgia Inst Technol, Microelect Res Ctr, Atlanta, GA 30332 USA
Aravamudhan, S.
Singleton, J.
论文数: 0引用数: 0
h-index: 0
机构:
Los Alamos Natl Lab, NHMFL, Los Alamos, NM USAGeorgia Inst Technol, Microelect Res Ctr, Atlanta, GA 30332 USA
Singleton, J.
Goddard, P. A.
论文数: 0引用数: 0
h-index: 0
机构:
Univ Oxford, Dept Phys, Clarendon Lab, Oxford OX1 3PU, EnglandGeorgia Inst Technol, Microelect Res Ctr, Atlanta, GA 30332 USA
Goddard, P. A.
Bhansali, S.
论文数: 0引用数: 0
h-index: 0
机构:
Univ S Florida, NNRC, Dept Elect Engn, Tampa, FL 33620 USAGeorgia Inst Technol, Microelect Res Ctr, Atlanta, GA 30332 USA