Semiconductor-metal transition in semiconductor melts with 3d metal admixtures

被引：3
|
作者：
Sklyarchuk, V. [1 ]
Plevachuk, Yu [1 ]
Mudry, S. [1 ]
Shtablavyi, I. [1 ]
Sokolovskii, B. [1 ]
机构：
[1] Ivan Franko Natl Univ, Dept Met Phys, Lvov, Ukraine
来源：
13TH INTERNATIONAL CONFERENCE ON LIQUID AND AMORPHOUS METALS | 2008年 / 98卷
关键词：
D O I：
10.1088/1742-6596/98/6/062003
中图分类号：
TF [冶金工业];
学科分类号：
0806 ;
摘要：
Electrical conductivity and thermoelectric power measurements were performed for liquid semiconductor alloys Se0.5Te0.5 doped with 3d metals in a wide temperature range (up to 1600 K) under ambient pressures of argon gas (up to 30 MPa). Structure changes were studied by means of X-ray diffraction method. The 3d metal admixtures affect electrophysical properties and a temperature of the semiconductor-metal transition (SMT). © 2008 IOP Publishing Ltd.
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收藏
页码：U514 / U517
页数：4
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