Second layer nucleation in thin film growth

被引:56
作者
Rottler, J [1 ]
Maass, P [1 ]
机构
[1] Univ Konstanz, Fak Phys, D-78457 Constance, Germany
关键词
D O I
10.1103/PhysRevLett.83.3490
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We study the second layer nucleation on top of islands emerging Juring epitaxial growth of thin films. By employing kinetic Monte Carlo simulations we determine the critical island radius R-c upon which small stable nuclei form in the second laver. We find that the dependence of R,, on the additional step edge barrier Delta E-s (Schwoebel barrier) is not in accordance with existing theories. Scaling arguments are presented which explain how R-c depends on Delta E-s as well as on adatom diffusion rates and on the incoming atom flux. Based on the theory, the occurrence of smooth layer-by-layer growth as opposed to rough multilayer growth is discussed.
引用
收藏
页码:3490 / 3493
页数:4
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