1.9% bi-axial tensile strain in thick germanium suspended membranes fabricated in optical germanium-on-insulator substrates for laser applications

被引：80

作者：

Gassenq, A. ^{[1
,2
]}

Guilloy, K. ^{[1
,2
]}

Dias, G. Osvaldo ^{[1
,3
]}

Pauc, N. ^{[1
,2
]}

Rouchon, D. ^{[1
,3
]}

Hartmann, J. -M. ^{[1
,3
]}

Widiez, J. ^{[1
,3
]}

Tardif, S. ^{[1
,2
]}

Rieutord, F. ^{[1
,2
]}

Escalante, J. ^{[1
,2
]}

Duchemin, I. ^{[1
,2
]}

Niquet, Y. -M. ^{[1
,2
]}

Geiger, R. ^{[4
]}

Zabel, T. ^{[4
]}

Sigg, H. ^{[4
]}

Faist, J. ^{[5
]}

Chelnokov, A. ^{[1
,3
]}

Reboud, V. ^{[1
,3
]}

Calvo, V. ^{[1
,2
]}

机构：

[1] Univ Grenoble Alpes, F-38000 Grenoble, France

[2] CEA INAC, SP2M, F-38000 Grenoble, France

[3] CEA LETI, F-38054 Grenoble, France

[4] Paul Scherrer Inst, Lab Micro & Nanotechnol, CH-5232 Villigen, Switzerland

[5] ETH, Inst Quantum Elect, CH-8093 Zurich, Switzerland

来源：

APPLIED PHYSICS LETTERS | 2015年 / 107卷 / 19期

关键词：

SPECTROSCOPY; STRESS; GAIN; GE;

D O I：

10.1063/1.4935590

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

High tensile strains in Ge are currently studied for the development of integrated laser sources on Si. In this work, we developed specific Germanium-On-Insulator 200mm wafer to improve tolerance to high strains induced via shaping of the Ge layers into micro-bridges. Building on the high crystalline quality, we demonstrate bi-axial tensile strain of 1.9%, which is currently the highest reported value measured in thick (350 nm) Ge layer. Since this strain is generally considered as the onset of the direct bandgap in Ge, our realization paves the way towards mid-infrared lasers fully compatible with CMOS fab technology. (C) 2015 AIP Publishing LLC.

引用

页数：4

共 20 条

[1] STRESS-INDUCED SHIFTS OF FIRST-ORDER RAMAN FREQUENCIES OF DIAMOND AND ZINC-BLENDE-TYPE SEMICONDUCTORS
CERDEIRA, F
BUCHENAUER, CJ
CARDONA, M
POLLAK, FH
[J]. PHYSICAL REVIEW B-SOLID STATE, 1972, 5 (02): : 580 - +
[2] Fabrication and characterisation of 200 mm germanium-on-insulator (GeOl) substrates made from bulk germanium
Deguet, C.
Sanchez, L.
Akatsu, I.
Allibert, F.
Dechamp, J.
Madeira, F.
Mazen, F.
Tauzin, A.
Loup, V.
Richtarch, C.
Mercier, D.
Signamarcheix, T.
Letertre, F.
Depuydt, B.
Kernevez, N.
[J]. ELECTRONICS LETTERS, 2006, 42 (07) : 415 - 417
[3] DeWolf I, 1996, SEMICOND SCI TECH, V11, P139, DOI 10.1088/0268-1242/11/2/001
[4] Band structure and optical gain of tensile-strained germanium based on a 30 band k•p formalism
El Kurdi, Moustafa
Fishman, Guy
Sauvage, Sebastien
Boucaud, Philippe
[J]. JOURNAL OF APPLIED PHYSICS, 2010, 107 (01)
[5] All-Around SiN Stressor for High and Homogeneous Tensile Strain in Germanium Microdisk Cavities
Ghrib, Abdelhamid
El Kurdi, Moustafa
Prost, Mathias
Sauvage, Sebastien
Checoury, Xavier
Beaudoin, Gregoire
Chaigneau, Marc
Ossikovski, Razvigor
Sagnes, Isabelle
Boucaud, Philippe
[J]. ADVANCED OPTICAL MATERIALS, 2015, 3 (03): : 353 - 358
[6] Tensile Strained Germanium Nanowires Measured by Photocurrent Spectroscopy and X-ray Microdiffraction
Guilloy, Kevin
Pauc, Nicolas
Gassenq, Alban
Gentile, Pascal
Tardif, Samuel
Rieutord, Francois
Calvo, Vincent
[J]. NANO LETTERS, 2015, 15 (04) : 2429 - 2433
[7] Strong enhancement of direct transition photoluminescence with highly tensile-strained Ge grown by molecular beam epitaxy
Huo, Yijie
Lin, Hai
Chen, Robert
Makarova, Maria
Rong, Yiwen
Li, Mingyang
Kamins, Theodore I.
Vuckovic, Jelena
Harris, James S.
[J]. APPLIED PHYSICS LETTERS, 2011, 98 (01)
[8] Letertre F., 2004, MRS Online Proc.Libr, V809, DOI [10.1557/PROC-809-B4.4, DOI 10.1557/PROC-809-B4.4]
[9] Tensile-strained, n-type Ge as a gain medium for monolithic laser integration on Si
Liu, Jifeng
Sun, Xiaochen
Pan, Dong
Wang, Xiaoxin
Kimerling, Lionel C.
Koch, Thomas L.
Michel, Jurgen
[J]. OPTICS EXPRESS, 2007, 15 (18) : 11272 - 11277
[10] Petykiewicz J., ARXIV150801255

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