Post-growth annealing study of heavily Ga-doped zinc oxide grown by radio frequency magnetron sputtering

被引：9

作者：

Pak, C. M. ^{[1
]}

Su, S. C. ^{[1
]}

Ling, C. C. ^{[1
]}

Lu, Y. M. ^{[2
]}

Zhu, D. L. ^{[2
]}

机构：

[1] Univ Hong Kong, Dept Phys, Hong Kong, Hong Kong, Peoples R China

[2] Shenzhen Univ, Coll Mat Sci & Engn, Shenzhen, Peoples R China

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2013年 / 46卷 / 13期

关键词：

CHEMICAL-VAPOR-DEPOSITION; ZNO FILMS; THIN-FILMS; SCATTERING; MECHANISM; SAPPHIRE; GALLIUM;

D O I：

10.1088/0022-3727/46/13/135104

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Heavily doped Ga-doped ZnO (resistivity similar to 8 x 10(-4) Omega cm and optical transmittance 96%) were fabricated by radio frequency magnetron sputtering. Post-growth annealing studies in H-2-Ar and pure Ar atmospheres were conducted. No noticeable thermal-induced change in the Ga depth profile or in the Ga chemical state was found in both atmospheres up to 600 degrees C. The Burstein-Moss effect was exhibited in the effective optical band gap, and the cathodoluminescence (CL) photon energy of the near band edge emission. CL emission related to V-Zn persisted after the 600 degrees C annealing. The thermal evolutions of the carrier concentrations were nearly identical for both annealing atmospheres. The carrier mobility increased upon annealing in H-2/Ar and remained effectively unchanged in pure Ar. The observed changes in carrier concentration and mobility were tentatively associated with V-Zn, or other compensating defects, which have concentrations as high as 1019-1020 cm(-3).

引用

页数：8

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