SIMS characterisation of chemical solution deposited thin film systems of BaTiO3/X (X=LaNiO3, La0.5Sr0.5CoO3, La0.7Sr0.3MnO3) on a platinised silicon wafer

被引：5

作者：

Pollak, C

Busic, A

Reichmann, K

Hutter, H

机构：

[1] Vienna Univ Technol, Dept Analyt Chem, A-1060 Vienna, Austria

[2] Graz Univ Technol, Dept Chem Technol Inorgan Mat, A-8010 Graz, Austria

来源：

THIN SOLID FILMS | 2002年 / 405卷 / 1-2期

基金：

奥地利科学基金会;

关键词：

crystallisation; chemical; buffer; capacitor; components;

D O I：

10.1016/S0040-6090(01)01755-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Chemical solution deposited multilayer systems of BaTiO3/X/Pt/TiO2/SiO2/Si (where X=LaNiO3. La0.5Sr0.5CoO3, La0.7Sr0.3MnO3) were investigated by dynamic SIMS (Secondary Ion Mass Spectroscopy). The BaTiO3 layer is intended to serve as a dielectric layer for a capacitor and the conducting layer 'X' is a buffer layer intended to eliminate fatigue effects, which usually occur at the Pt/BaTiO3 interface. Depth profiles of the main components were obtained revealing intense diffusion processes, which must have occurred during the deposition/crystallisation processes. Sr impurities were detected in the BaTiO3 layer originating most probably from the BaTiO3 precursor solution. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：218 / 223

页数：6