SIMS characterisation of chemical solution deposited thin film systems of BaTiO3/X (X=LaNiO3, La0.5Sr0.5CoO3, La0.7Sr0.3MnO3) on a platinised silicon wafer

Chemical solution deposited multilayer systems of BaTiO3/X/Pt/TiO2/SiO2/Si (where X=LaNiO3. La0.5Sr0.5CoO3, La0.7Sr0.3MnO3) were investigated by dynamic SIMS (Secondary Ion Mass Spectroscopy). The BaTiO3 layer is intended to serve as a dielectric layer for a capacitor and the conducting layer 'X' is a buffer layer intended to eliminate fatigue effects, which usually occur at the Pt/BaTiO3 interface. Depth profiles of the main components were obtained revealing intense diffusion processes, which must have occurred during the deposition/crystallisation processes. Sr impurities were detected in the BaTiO3 layer originating most probably from the BaTiO3 precursor solution. (C) 2002 Elsevier Science B.V. All rights reserved.