Enhancement in solar hydrogen generation efficiency using a GaN-based nanorod structure

被引：49

作者：

Benton, J. ^{[1
]}

Bai, J. ^{[1
]}

Wang, T. ^{[1
]}

机构：

[1] Univ Sheffield, Dept Elect & Elect Engn, Sheffield S1 3JD, S Yorkshire, England

来源：

APPLIED PHYSICS LETTERS | 2013年 / 102卷 / 17期

基金：

英国工程与自然科学研究理事会;

关键词：

D O I：

10.1063/1.4803926

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A significant enhancement in solar hydrogen generation has been achieved using a GaN-based nanorod array structure as a photoelectrode in comparison with a planar one fabricated from the same parent wafer. The nanorod array structure was formed by dry etching using a self-organised nickel nanomask. Under identical illumination conditions in hydrochloric acid solution, the photoelectrode with the nanorod array structure has demonstrated a photocurrent enhancement with a factor of 6 and an enhancement in the rate of hydrogen generation with a factor of 7. The enhancement in solar hydrogen generation is attributed to a massive improvement in light absorption area, reduced travelling distance for the migration of the photogenerated carriers to the semiconductor/electrolyte interface, and surface band bending. (C) 2013 AIP Publishing LLC.

引用

页数：4

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