More-Than-Moore: 3D Heterogeneous Integration into CMOS Technologies

被引：0

作者：

Wang, Albert ^{[1
]}

Chen, Qi ^{[1
]}

Li, Cheng ^{[1
]}

Lu, Fei ^{[1
]}

Wang, Chenkun ^{[1
]}

Zhang, Feilong ^{[1
]}

Wang, X. Shawn ^{[2
]}

Ng, Jimmy ^{[2
]}

Xie, Ya-Hong ^{[2
]}

Ma, Rui ^{[3
]}

Wang, Li ^{[4
]}

Lin, Lin ^{[5
]}

机构：

[1] Univ Calif Riverside, Dept Elect & Comp Engn, Riverside, CA 92521 USA

[2] Univ Calif Los Angeles, Los Angeles, CA USA

[3] Intel, Santa Clara, CA USA

[4] Skyworks Solut, Thousand Oaks, CA USA

[5] Global Foundries, Santa Clara, CA USA

来源：

2017 IEEE 12TH INTERNATIONAL CONFERENCE ON NANO/MICRO ENGINEERED AND MOLECULAR SYSTEMS (NEMS) | 2017年

基金：

美国国家科学基金会;

关键词：

Graphene; NEMS; ESD; inductor; magnetic core; heterogeneous; 3D; integration; ESD PROTECTION; MAGNETIC CORE; RF INDUCTOR; DESIGN;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Monotonic scaling-down of CMOS integrated circuit (IC) technologies is rapidly approaching to its physical end, yet advances in ICs will continue. Instead of one-dimensional (1D) scaling dawn, one apparent solution is lateral integration of heterogeneous devices in 3-dimensional (3D) fashion, which opens great opportunities to make more complex Si-based microsystems for unlimited applications well beyond ICs, such as, internet of things (IoT). This paper discusses 3D heterogeneous integration of a few non-traditional devices into traditional Si CMOS technologies.

引用

页码：1 / 4

页数：4

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