On Ve-Degree and Ev-Degree Based Topological Properties of Silicon Carbide Si2C3-II[p,q]

Quantitative structure-property and structure-activity relationships of the silicon carbide compounds necessitate expressions for the molecular topological features of these compounds. Topological indices are vital devices for investigating chemical compounds to comprehend the fundamental topology of chemical structures. Ev-degree and ve-degree based topological indices are two novel degrees based indices as of late defined in chemical graph theory. Ev-degree and ve-degree based topological indices have been defined as corresponding to their relating partners. In this article, we have computed degree based topological indices namely ev-degree Zagreb type index, ev-degree Randic index, ve-degree atom-bond connectivity index, ve-degree geometric-arithmetic index, ve-degree harmonic index, and ve degree sum-connectivity (ve-chi) based on ev-degree and ve-degree for silicon carbide Si2C3-II[p,q].