Characterization of traps in crystalline silicon on glass film using deep-level transient spectroscopy

被引：1
|
作者：
Mchedlidze, T. [1 ]
Zollondz, J. -H. [2 ]
Kittler, M. [1 ,3 ]
机构：
[1] Jointlab IHP BTU, Konrad Wachsmann Allee 1, D-03046 Cottbus, Germany
[2] CSG Solar AG, D-06766 Thalheim, Germany
[3] IHP Microelect, D-15236 Frankfurt, Germany
来源：
GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY XIV | 2011年 / 178-179卷
关键词：
Thin film solar cells; crystalline silicon on glass; DLTS of dislocation related traps;
D O I：
10.4028/www.scientific.net/SSP.178-179.100
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Thin crystalline silicon films on glass substrate, fabricated using solid phase crystallization for application in thin-film solar cells, were investigated by deep level transient spectroscopy (DLTS). The analyses of the DLTS spectra obtained during temperature scans revealed presence of carrier traps related to dislocations in silicon. Other carrier traps of yet unknown nature were detected as well. Variations of electrical activity of the traps were achieved applying variations in the process of the film formation. These changes were also detected during DLTS measurements, suggesting a possibility for applying of DLTS for the investigation and characterization of the thin-film Si material on glass.
引用
收藏
页码：100 / +
页数：2
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