Board Level Reliability Optimization for 3D IC Packages with Extra Large Interposer

被引:8
作者
Yip, Laurene [1 ]
Hariharan, Ganesh [1 ]
Chaware, Raghu [1 ]
Singh, Inderjit [1 ]
Lee, Tom [1 ]
机构
[1] Xilinx Inc, 2100 Log Dr, San Jose, CA 95124 USA
来源
2017 IEEE 67TH ELECTRONIC COMPONENTS AND TECHNOLOGY CONFERENCE (ECTC 2017) | 2017年
关键词
TECHNOLOGY;
D O I
10.1109/ECTC.2017.294
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
3D IC packages with stacked silicon interconnects (SSI) have many performance advantages over conventional flip chip packages. Using SSI, various die using the same or different technology can be connected to each other with the use of an interposer. The interposer allows a large number of die-to-die connections, enabling higher interconnect bandwidth, lower power consumption, and lower I/O latency. With the demand for higher integration, extra-large interposer packages were developed with die sizes greater than the reticle size. Our study evaluated the board level reliability of 55 mm 3D IC packages with interposers as large as 45 mm. The packages were assembled with multiple 20 nm Cu/ELK (extreme low-k) die mounted on through-silicon via (TSV) interposers. With extremely large interposer packages, the assembly process and materials must be optimized to reduce the package stress and warpage that can lead to package or solder joint failures. The effect of different factors such as board pad design and assembly on board level reliability was evaluated on 55 mm 3D IC packages with an extremely large TSV interposer assembled with organic substrates. Lid construction (1-piece vs. 2-piece lid) and substrate material properties that can affect package warpage and solder joint reliability were also assessed. Our study results indicated the assembly materials and package construction have significant impact on the board level reliability.
引用
收藏
页码:1269 / 1275
页数:7
相关论文
共 9 条
[1]   A review of 3-D packaging technology [J].
Al-Sarawi, SF ;
Abbott, D ;
Franzon, PD .
IEEE TRANSACTIONS ON COMPONENTS PACKAGING AND MANUFACTURING TECHNOLOGY PART B-ADVANCED PACKAGING, 1998, 21 (01) :2-14
[2]  
Banijamali B, 2011, ELEC COMP C, P573, DOI 10.1109/ECTC.2011.5898569
[3]  
Banijamali B, 2011, ELEC COMP C, P285, DOI 10.1109/ECTC.2011.5898527
[4]  
Chaware R, 2012, 2012 IEEE 62ND ELECTRONIC COMPONENTS AND TECHNOLOGY CONFERENCE (ECTC), P279, DOI 10.1109/ECTC.2012.6248841
[5]  
Lau J., 2011, ADV PACKAGING MAT AP
[6]  
Saban Kirk, 2012, XILINX STACKED SILIC
[7]   Development of Silicon Module with TSVs and Global Wiring (L/S=0.8/0.8μm) [J].
Sunohara, Masahiro ;
Shiraishi, Akinori ;
Taguchi, Yuichi ;
Murayama, Kei ;
Higashi, Mitsutoshi ;
Shimizu, Mitsuharu .
2009 IEEE 59TH ELECTRONIC COMPONENTS AND TECHNOLOGY CONFERENCE, VOLS 1-4, 2009, :25-31
[8]   Reliability challenges in 3D IC packaging technology [J].
Tu, K. N. .
MICROELECTRONICS RELIABILITY, 2011, 51 (03) :517-523
[9]   Development of Through Silicon Via (TSV) Interposer Technology for Large Die (21x21mm) Fine-pitch Cu/low-k FCBGA Package [J].
Zhang, Xiaowu ;
Chai, T. C. ;
Lau, John H. ;
Selvanayagam, C. S. ;
Biswas, Kalyan ;
Liu, Shiguo ;
Pinjala, D. ;
Tang, G. Y. ;
Ong, Y. Y. ;
Vempati, S. R. ;
Wai, Eva ;
Li, H. Y. ;
Liao, E. B. ;
Ranganathan, N. ;
Kripesh, V. ;
Sun, Jiangyan ;
Doricko, John ;
Vath, C. J., III .
2009 IEEE 59TH ELECTRONIC COMPONENTS AND TECHNOLOGY CONFERENCE, VOLS 1-4, 2009, :305-+