Very high performance LWIR and VLWIR Type-II InAs/GaSb superlattice photodiodes with M-structure barrier

被引：13

作者：

Nguyen, Binh-Minh ^{[1
]}

Hoffman, Darin ^{[1
]}

Delaunay, Pierre-Yves ^{[1
]}

Huang, Edward Kwel-wei ^{[1
]}

Razeghi, Manijeh ^{[1
]}

机构：

[1] Northwestern Univ, Dept Elect Engn & Comp Sci, Ctr Quantum Devices, Evanston, IL 60208 USA

来源：

INFRARED SPACEBORNE REMOTE SENSING AND INSTRUMENTATION XVI | 2008年 / 7082卷

关键词：

Type-II superlattice; InAs; GaSb; M-structure; focal plane array; LWIR; VLWIR;

D O I：

10.1117/12.794210

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

LWIR and VLWIR type II InAs/GaSb superlattice photodetectors have for long time suffered from a high dark current level and a low dynamic resistance which hampers the its emergence to the infrared detection and imaging industry. However, with the use of M-structure superlattice, a new type 11 binary InAs/GaSb/AlSb superlattice design, as an effective blocking barrier, the dark current in type 11 superlattice diode has been significantly reduced. We have obtained comparable differential resistance product to the MCT technology at the cut-off wavelength of 10 and 14 mu m. Also, this new design is compatible with the optical optimization scheme, leading to high quantum efficiency, high special detectivity devices for photon detectors and focal plane arrays.

引用

页数：12

共 14 条

[1]

DELAUNAY PY, 2007, APPL PHYS LETT, V91, P3

[2] High performance InAs/Ga1-xInxSb superlattice infrared photodiodes [J].

Fuchs, F ;

Weimer, U ;

Pletschen, W ;

Schmitz, J ;

Ahlswede, E ;

Walther, M ;

Wagner, J ;

Koidl, P .

APPLIED PHYSICS LETTERS, 1997, 71 (22) :3251-3253

[3]

HOFFMAN D, 2007, APPL PHYS LETT, V91

[4] THEORY OF A WIDE-GAP EMITTER FOR TRANSISTORS [J].

KROEMER, H .

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1957, 45 (11) :1535-1537

[5] Interface-induced suppression of the Auger recombination in type-II InAs/GaSb superlattices [J].

Mohseni, H ;

Litvinov, VI ;

Razeghi, M .

PHYSICAL REVIEW B, 1998, 58 (23) :15378-15380

[6] Type-II "M" structure photodiodes: An alternative material design for mid-wave to long wavelength infrared regimes [J].

Nguyen, B-M. ;

Razeghi, M. ;

Nathan, V. ;

Brown, Gail J. .

QUANTUM SENSING AND NANOPHOTONIC DEVICES IV, 2007, 6479

[7] Very high quantum efficiency in type-II InAs/GaSb superlattice photodiode with cutoff of 12 μm [J].

Nguyen, Binh-Minh ;

Hoffman, Darin ;

Wei, Yajun ;

Delaunay, Pierre-Yves ;

Hood, Andrew ;

Razeghi, Manijeh .

APPLIED PHYSICS LETTERS, 2007, 90 (23)

[8]

NGUYEN BM, 2007, APPL PHYS LETT, V91, P3

[9]

RAZEGHI M, 2006, INFRARED TECHNOLOGY, V6206, P7

[10]

RODRIGUEZ JB, 2007, APPL PHYS LETT, V91

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