Fracture in Hydrogen-Implanted Germanium

被引：0

作者：

Mazen, F. ^{[1
]}

Tauzin, A. ^{[1
]}

Sanchez, L. ^{[1
]}

Chieux, F. ^{[1
]}

Deguet, C. ^{[1
]}

Augendre, E. ^{[1
]}

Akatsu, T. ^{[2
]}

Richtarch, C. ^{[2
]}

Clavelier, L. ^{[1
]}

机构：

[1] CEA LETI MINATEC, 17 Rue Martyrs, F-38054 Grenoble 9, France

[2] SOITEC SA, Pare Technol Fontaines, F-38190 Bernin, France

来源：

ION IMPLANTATION TECHNOLOGY 2008 | 2008年 / 1066卷

关键词：

Germanium; Germanium On Insulator; Fracture; Hydrogen;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have studied the mechanism of fracture in hydrogen-implanted Ge. First, the as-implanted Ge state and its evolution during subsequent annealing were characterized via TEM and FTIR-MIR spectroscopy. Results showed that the extended defect. formation and growth follow the same basic mechanism in Ge as in Si, which is the reference material. Nevertheless, the global damage level in the implanted Ge layer is higher compared to Si. Second, the fracture step was studied via the fracture kinetics analysis, SIMS and AFM on the transferred layer. An activation energy comparable to die reported data from blistering studies was obtained. Just like in Si, the Cmax of H in Ge measured via SIMS was found to decrease during the fracture anneal. This decrease is associated with the formation of gaseous H-2 that pressurizes the internal cavities and then contributes to die fracture. Finally, a high roughness of the Ge transferred layer was measured, which results from the large thickness of the implantation damaged zone.

引用

页码：217 / +

页数：2

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