Structural, electrical and magnetic properties of diluted magnetic semiconductor Si1-xMnxTe1.5 single crystals

被引：0

作者：

Hwang, Younghun ^{[1
]}

Cho, Sunglae ^{[1
]}

Kim, Hyekyeong ^{[1
]}

Um, Youngho ^{[1
]}

机构：

[1] Univ Ulsan, Dept Phys, Ulsan 680749, South Korea

来源：

JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2006年 / 48卷 / 06期

关键词：

diluted magnetic semiconductor; magnetization; Si1-xMnxTe1.5;

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We studied the dependence of the magnetic properties on the Mn concentration of IV-VI diluted magnetic semiconductor Si1-xMnxTe1.5 single crystals prepared by using the vertical Bridgman technique. X-ray studies showed that the crystal structure was hexagonal. The magnetization measurement of Si1-xMnxTe1.5 showed a ferromagnetic ordering up to 80 K. With increasing Mn concentration, the saturation. magnetization increased and the coercive field increased, as shown in the hysteresis loop. For x = 0.20 and 0.31, a slope change in the resistivity was observed around 80 K and corresponded to a ferromagnetic (FM)-paramagnetic (PM) phase transition.

引用

页码：1432 / 1434

页数：3

共 20 条

[1] MAGNETIZATION STUDIES OF (GETE)1-X(MNTE)X PSEUDOBINARY ALLOYS [J].