Epitaxial growth of para-hexaphenyl on GaAs (001)-2 x 4

被引：17

作者：

Erlacher, K

Resel, R

Hampel, S

Kuhlmann, T

Lischka, K

Müller, B

Thierry, A

Lotz, B

Leising, G

机构：

[1] Graz Tech Univ, Inst Festkorperphys, A-8010 Graz, Austria

[2] Univ Gesamthsch Paderborn, Fachbereich Phys, D-33095 Paderborn, Germany

[3] ETH Zurich, CH-8952 Schlieren, Switzerland

[4] Inst Charles Sadron, F-67083 Strasbourg, France

来源：

SURFACE SCIENCE | 1999年 / 437卷 / 1-2期

关键词：

hexaphenyl; gallium arsenide; surface morphology; transmission high-energy electron diffraction;

D O I：

10.1016/S0039-6028(99)00714-1

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

para-Hexaphenyl grows on GaAs (001) in well-defined, three-dimensional islands of a needle-like shape. The needles are oriented in [100] with respect to GaAs. The orientation of the hexaphenyl molecules within the needles has been studied using electron diffraction techniques. Two different orientations of the epitaxially grown hexaphenyl molecules on GaAs are identified. One with the (1001) plane and the other one with the (110 (2) over bar) plane of hexaphenyl parallel to GaAs (001). In both cases, the b-axis of hexaphenyl is parallel to [100]. The epitaxial growth of the needle-like hexaphenyl is explained in terms of micro and rotation twinning. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：191 / 197

页数：7

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