High resolution, high channel coup mid infrared arrayed waveguide gratings in silicon

Arrayed waveguide gratings (AWGs) working in the 4.7 Am wavelength range are reported on silicon-on-insulator waveguides with 1500 nm thick silicon and 2 IAM thick buried oxide layers. For eight channel devices, three different channel spacings (200 GHz, 100 GHz, and 50 GHz) with cross talk levels of -32.31 dB, -31.87 dB, and -27.28 dB and insertion loss levels of -1.43 dB, -4.2 dB, and -2.3 dB, respectively, are demonstrated. Fourteen channel AWGs with 170 GHz channel spacing and 16 channel AWGs with 87 GHz channel spacing are shown to have a cross talk value of -21.67 dB and -24.30 dB and insertion loss value of -4.2 dB and -3.8 dB, respectively. Two AWGs with 10 nm difference in channel peak are designed, and the measurements show a 9.3 nm difference. The transmission spectrum shift as a function of temperature is found to be 0.22 nm/degrees C. (C) 2020 Optical Society of America