A New Analytical Subthreshold Behavior Model for Single-Halo, Dual-Material Gate Silicon-on-Insulator Metal Oxide Semiconductor Field Effect Transistor

被引：7
作者：
Chiang, Te-Kuang [1 ]
机构：
[1] Natl Univ Kaohsiung, Dept Elect Engn, Kaohsiung 811, Taiwan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2008年 / 47卷 / 11期
关键词：
subthreshold behavior model; subthreshold current; threshold voltage; single-halo dual-material gate SOI MOSFET;
D O I：
10.1143/JJAP.47.8297
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
On the basis of the exact solution of the two-dimensional Poisson equation, a new analytical subthreshold behavior model consisting of the two-dimensional potential. threshold voltage, and subthreshold current for the dual-material gate (SHDMG) silicon-on-insulator (SOI) metal oxide semiconductor field effect transistor (MOSFET) is developed. The model is verified by the good agreement with a numerical simulation using the device simulator MEDICI. The model not only offers a physical insight into device physics but is also an efficient device model the circuit simulation.
引用
收藏
页码：8297 / 8304
页数：8
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