Spin transfer induced coherent microwave emission with large power from nanoscale MgO tunnel junctions

被引：125

作者：

Houssameddine, D. ^{[1
]}

Florez, S. H. ^{[2
]}

Katine, J. A. ^{[2
]}

Michel, J. -P. ^{[3
]}

Ebels, U. ^{[1
]}

Mauri, D. ^{[4
]}

Ozatay, O. ^{[2
]}

Delaet, B. ^{[3
]}

Viala, B. ^{[3
]}

Folks, L. ^{[2
]}

Terris, B. D. ^{[2
]}

Cyrille, M. -C. ^{[3
]}

机构：

[1] CEA INAC, INPG, UJF, CNRS,SPINTEC, F-38054 Grenoble, France

[2] Hitachi Global Storage Technol, San Jose Res Ctr, San Jose, CA 95135 USA

[3] CEA LETI MINATEC, F-38054 Grenoble, France

[4] Hitachi Global Storage Technol, San Jose, CA 95193 USA

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 02期

关键词：

D O I：

10.1063/1.2956418

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In low resistance-area product MgO magnetic tunnel junction nanopillars, we observe high integrated power (up to 43 nW), narrow linewidth (down to 10 MHz), spin transfer induced microwave emission at frequencies up to 14 GHz due to precession of the free layer magnetization at room temperature. Although all devices were fabricated on the same wafer, they present bimodal transport and precessional characteristics. The devices in which the narrowest linewidths were observed exhibited low resistance and tunneling magnetoresistance (30%), while maintaining large integrated power. (C) 2008 American Institute of Physics.

引用

页数：3

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