Magnetic behavioural change of silane exposed graphene nanoflakes

被引:17
作者
Ray, Sekhar C. [1 ]
Mishra, D. K. [1 ,2 ]
Strydom, A. M. [3 ]
Papakonstantinou, P. [4 ]
机构
[1] Univ S Africa, Coll Sci Engn & Technol, Dept Phys, ZA-1710 Johannesburg, South Africa
[2] Siksha O Anusandhan Univ, Dept Phys, Inst Tech Res & Educ, Bhubaneswar 751030, Odisha, India
[3] Univ Johannesburg, Dept Phys, Highly Correlated Matter Res Grp, ZA-2006 Auckland Pk, South Africa
[4] Univ Ulster, Sch Engn, Nanotechnol & Integrated Bioengn Ctr NIBEC, Newtownabbey BT37 0QB, North Ireland
基金
新加坡国家研究基金会;
关键词
ELECTRIC-FIELD; SILICON; CARBON; TEMPERATURE; MOLECULES; FILMS;
D O I
10.1063/1.4930932
中图分类号
O59 [应用物理学];
学科分类号
摘要
The electronic structures and magnetic properties of graphene nanoflakes (GNFs) exposed to an organo-silane precursor [tetra-methyl-silane, Si(CH3)(4)] were studied using atomic force microscopy, electron field emission (EFE), x-ray photoelectron spectroscopy (XPS), and magnetization. The result of XPS indicates that silyl radical based strong covalent bonds were formed in GNFs, which induced local structural relaxations and enhanced sp(3) hybridization. The EFE measurements show an increase in the turn-on electric field from 9.8V/mu m for pure GNFs to 26.3 V/mu m for GNFs:Si having highest Si/(Si vertical bar C) ratio (similar or equal to 0.35) that also suggests an enhancement of the non-metallic sp(3) bonding in the GNFs matrix. Magnetic studies show that the saturation magnetization (Ms) is decreased from 172.53 x 10(-6) emu/g for pure GNFs to 13.00 x 10(-6) emu/g for GNFs:Si with the highest Si/(Si vertical bar C) ratio 0.35, but on the other side, the coercivity (Hc) increases from 66 to 149 Oe due to conversion of sp(2) > sp(3) -hybridization along with the formation of SiC and Si-O bonding in GNFs. The decrease in saturation magnetization and increase in coercivity (Hc) in GNFs on Si-functionalization are another routes to tailor the magnetic properties of graphene materials for magnetic device applications. (C) 2015 AIP Publishing LLC.
引用
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页数:5
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