Investigation and comparison of the noise in the gate and substrate current after soft-breakdown

被引：6

作者：

Crupi, F ^{[1
]}

Degraeve, R ^{[1
]}

Groeseneken, G ^{[1
]}

Nigam, T ^{[1
]}

Maes, H ^{[1
]}

机构：

[1] IMEC, B-3001 Louvain, Belgium

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1999年 / 38卷 / 4B期

关键词：

random telegraph signal; soft-breakdown; ultra-thin oxide; substrate current; correlated fluctuations;

D O I：

10.1143/JJAP.38.2219

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Random telegraph signal after soft-breakdown is explained by the capture-emission of electrons in the same oxide traps of the soft-breakdown path. It is shown that not only the gate current noise, but also the substrate current noise largely increase at the soft-breakdown moment in n-channel metal-oxide-semiconductor field effect transistor (nMOSFET) stressed with positive gate polarity. A strong correlation of the noise in the gate and substrate current is reported.

引用

页码：2219 / 2222

页数：4

共 9 条

[1]

Briere O., 1996, ESSDERC'96. Proceedings of the 26th European Solid State Device Research Conference, P759

[2] Soft breakdown of ultra-thin gate oxide layers [J].