Si single crystal;
Czochralski crystal growth;
heat and mass transfer;
D O I:
10.1143/JJAP.36.6181
中图分类号:
O59 [应用物理学];
学科分类号:
摘要:
The modification of heat transfer in molten silicon during Czochralski (CZ) crystal growth is discussed by focusing on the transition of the flow mode from axisymmetric to nonaxisymmetric, in order to clarify the mechanism of crystal-melt interface shape deformation. Heat transfer in silicon melt is observed by measuring the difference in temperature near the crucible wall and at the crystal-melt interface with simultaneous observation of molten silicon flow. We confirm that the heat transfer coefficient of silicon melt is reduced when the flow mode is changed from axisymmetric to non-axisymmetric. The crystal-melt interface shape changed as a result of the modified heat transfer, which is due to the flow mode transition from axisymmetric to non-axisymmetric.
机构:
Huazhong Univ Sci & Technol, Sch Energy & Power Engn, Wuhan 430074, Peoples R ChinaHuazhong Univ Sci & Technol, Sch Energy & Power Engn, Wuhan 430074, Peoples R China
Fang, Haisheng
Tian, Jun
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机构:
Huazhong Univ Sci & Technol, Sch Energy & Power Engn, Wuhan 430074, Peoples R ChinaHuazhong Univ Sci & Technol, Sch Energy & Power Engn, Wuhan 430074, Peoples R China
Tian, Jun
Zhang, Quanjiang
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机构:
Huazhong Univ Sci & Technol, Sch Energy & Power Engn, Wuhan 430074, Peoples R ChinaHuazhong Univ Sci & Technol, Sch Energy & Power Engn, Wuhan 430074, Peoples R China
Zhang, Quanjiang
Pan, Yaoyu
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Huazhong Univ Sci & Technol, Sch Energy & Power Engn, Wuhan 430074, Peoples R ChinaHuazhong Univ Sci & Technol, Sch Energy & Power Engn, Wuhan 430074, Peoples R China
Pan, Yaoyu
Wang, Sen
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机构:
Huazhong Univ Sci & Technol, Sch Energy & Power Engn, Wuhan 430074, Peoples R ChinaHuazhong Univ Sci & Technol, Sch Energy & Power Engn, Wuhan 430074, Peoples R China