Field Oxide n-channel MOS Dosimeters Fabricated in CMOS Processes

被引：22
作者：
Lipovetzky, J. [1 ,2 ]
Garcia-Inza, M. A. [1 ]
Carbonetto, S. [1 ]
Carra, M. J. [1 ]
Redin, E. [1 ]
Sambuco Salomone, L. [1 ]
Faigon, A. [1 ,2 ]
机构：
[1] Univ Buenos Aires, Fac Ingn, INTECIN, Device Phys Microelect Lab, Buenos Aires, DF, Argentina
[2] Consejo Nacl Invest Cient & Tecn, RA-1033 Buenos Aires, DF, Argentina
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2013年 / 60卷 / 06期
关键词：
Dosimeters; MOS devices; radiation effects; solid-state detectors; IONIZING-RADIATION; GAMMA; RADIOTHERAPY; LEAKAGE; TRAPS; BIAS;
D O I：
10.1109/TNS.2013.2287256
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper presents a new technique to build MOS dosimeters using unmodified standard CMOS processes. The devices are n-channel MOS transistors built with the regular Field Oxide as a thick radiation-sensitive gate. The devices were fabricated in two different commercial 0.6 mu m CMOS processes, gate oxide thicknesses of similar to 600 nm and similar to 400 nm. Responsivities up to 4.4 mV/rad with positive bias, and 1.7 mV/rad with zero gate bias were obtained in the thicker oxides. The effect of charge trapped in the oxide and interface states on the shift in the threshold voltage are analyzed.
引用
收藏
页码：4683 / 4691
页数：9
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