Performance improvement for epitaxially grown SiGe on Si solar cell by optimizing the back surface field

被引：2

作者：

Li, Dun ^{[1
]}

Zhao, Xin ^{[1
]}

Wang, Li ^{[1
]}

Conrad, Brianna ^{[1
]}

Soeriyadi, Anastasia ^{[1
]}

Lochtefeld, Anthony ^{[2
]}

Gerger, Andrew ^{[3
]}

Barnett, Allen ^{[1
]}

Perez-Wurfl, Ivan ^{[1
]}

机构：

[1] UNSW Australia, Sch Photovolta & Renewable Energy Engn, Sydney, NSW 2052, Australia

[2] AmberWave Inc, Salem, NH 03079 USA

[3] SolAero Technol Corp, Albuquerque, NM 87123 USA

来源：

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS | 2016年 / 10卷 / 10期

关键词：

III-V semiconductors; silicon; back surface field; SiGe; tandem solar cells; DISLOCATIONS; FABRICATION; DESIGN;

D O I：

10.1002/pssr.201600231

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This letter reports on the performance improvement of an epitaxially grown SiGe on Si solar cell by optimizing the back surface field (BSF). First, a Si0.18Ge0.82 on silicon (Si) solar cell was fabricated with a 0.25 m BSF layer. A 25 mV open-circuit voltage (V-OC) improvement was observed on this BSF solar cell compared with the reference solar cell without BSF layer. Then, a Si0.18Ge0.82 on Si solar cell with double BSF layers was designed and fabricated. The measured efficiency of this solar cell is 3.4% when filtered by a GaAs0.79P0.21 top cell. To the best of the authors' knowledge, the 3.4% efficiency reported here is the highest efficiency for SiGe on Si solar cells when filtered by a GaAs0.79P0.21 top cell. The previous best reported efficiency for high Ge composition SiGe on Si solar cell was only 1.7% when filtered by a GaAs0.79P0.21 top cell.

引用

页码：735 / 738

页数：4

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