Fabrication and characterization of 4H-SiC bipolar junction transistor with double base epilayer

被引：5

作者：

Zhang Qian ^{[1
]}

Zhang Yu-Ming ^{[1
]}

Yuan Lei ^{[1
]}

Zhang Yi-Men ^{[1
]}

Tang Xiao-Yan ^{[1
]}

Song Qing-Wen ^{[1
]}

机构：

[1] Xidian Univ, Sch Microelect, Key Lab Semicond Wide Band Gap Mat & Devices, Xian 710071, Peoples R China

来源：

CHINESE PHYSICS B | 2012年 / 21卷 / 08期

基金：

中国国家自然科学基金;

关键词：

4H-SiC; bipolar junction transistors; common-emitter current gain; specific on-resistance; open-base breakdown voltage;

D O I：

10.1088/1674-1056/21/8/088502

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

In this paper we report on a novel structure of a 4H-SiC bipolar junction transistor with a double base epilayer that is continuously grown. The measured dc common-emitter current gain is 16.8 at I-C = 28.6 mA (J(C) = 183.4 A/cm(2)), and it increases with the collector current density increasing. The specific on-state resistance (Rsp-on) is 32.3 m Omega.cm(2) and the open-base breakdown voltage reaches 410 V. The emitter N-type specific contact resistance and N+ emitter layer sheet resistance are 1.7 x 10(-3) Omega.cm(2) and 150 Omega/square, respectively.

引用

页数：4

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