Energy spectrum of backscattered electrons excited by a field emission scanning tunneling microscope with a build-up [111]-oriented W tip

被引:22
作者
Tomitori, M [1 ]
Terai, H [1 ]
Arai, T [1 ]
机构
[1] Japan Adv Inst Sci & Technol, Sch Mat Sci, Tatsunokuchi, Ishikawa 9231292, Japan
关键词
scanning tunneling microscopy; field emission microscopy; electron energy loss spectroscopy; Auger electron spectroscopy; build-up tip; silicon;
D O I
10.1016/S0169-4332(98)00783-1
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
A field emission scanning tunneling microscope (STM) combined with an electron energy analyzer was developed to acquire energy spectra of electrons backscattered from a sample surface impinged by a primary electron beam, which is field-emitted from an STM tip of build-up [111]-oriented W. Since the electron beam is field-emitted from the most protruding point of the [111] apex with a low work function and a sharp corner, the electron impinged area can be imaged with the STM by approaching the build-up W tip to the sample. Electron energy loss and Auger electron spectra were obtained for Si(111); an elastic backscattering peak, bulk plasmon loss peaks and a Si LW Anger peak were detected. The origin of anomalous broad inelastic peaks was also discussed. (C) 1999 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:123 / 127
页数:5
相关论文
共 8 条
[1]  
[Anonymous], 1961, FIELD EMISSION FIELD
[2]   ACTIVATION ENERGY FOR THE SURFACE MIGRATION OF TUNGSTEN IN THE PRESENCE OF A HIGH-ELECTRIC FIELD [J].
BETTLER, PC ;
CHARBONNIER, FM .
PHYSICAL REVIEW, 1960, 119 (01) :85-93
[3]   SURFACE STUDIES BY SCANNING TUNNELING MICROSCOPY [J].
BINNING, G ;
ROHRER, H ;
GERBER, C ;
WEIBEL, E .
PHYSICAL REVIEW LETTERS, 1982, 49 (01) :57-61
[4]   ATOM-SELECTIVE IMAGING OF THE GAAS(110) SURFACE [J].
FEENSTRA, RM ;
STROSCIO, JA ;
TERSOFF, J ;
FEIN, AP .
PHYSICAL REVIEW LETTERS, 1987, 58 (12) :1192-1195
[5]   TUNNELING SPECTROSCOPY OF THE SI(111)2X1 SURFACE [J].
FEENSTRA, RM ;
STROSCIO, JA ;
FEIN, AP .
SURFACE SCIENCE, 1987, 181 (1-2) :295-306
[6]   SURFACE ELECTRONIC-STRUCTURE OF SI(111)-(7 X 7) RESOLVED IN REAL SPACE [J].
HAMERS, RJ ;
TROMP, RM ;
DEMUTH, JE .
PHYSICAL REVIEW LETTERS, 1986, 56 (18) :1972-1975
[7]   IDENTIFICATION OF METALS IN SCANNING-TUNNELING-MICROSCOPY VIA IMAGE STATES [J].
JUNG, T ;
MO, YW ;
HIMPSEL, FJ .
PHYSICAL REVIEW LETTERS, 1995, 74 (09) :1641-1644
[8]   FIELD-EMISSION SCANNING AUGER MICROSCOPE (FESAM) [J].
REIHL, B ;
GIMZEWSKI, JK .
SURFACE SCIENCE, 1987, 189 :36-43