150 WGaN-on-Si RF power transistor

被引：21

作者：

Nagy, W ^{[1
]}

Singhal, S ^{[1
]}

Borges, R ^{[1
]}

Johnson, JW ^{[1
]}

Brown, JD ^{[1
]}

Therrien, R ^{[1
]}

Chaudhari, A ^{[1
]}

Hanson, AW ^{[1
]}

Riddle, J ^{[1
]}

Booth, S ^{[1
]}

Rajagopal, P ^{[1
]}

Piner, EL ^{[1
]}

Linthicum, KJ ^{[1
]}

机构：

[1] Nitronex Corp, Raleigh, NC 27606 USA

来源：

2005 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM, VOLS 1-4 | 2005年

关键词：

AlGaN/GaN HFETs; GaN high electron mobility transistor (HEMTs); linearity; reliability; RF power transistors;

D O I：

10.1109/MWSYM.2005.1516635

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A large periphery high power AlGaN/GaN HFET grown on a silicon substrate has demonstrated over 150 W of CW RF output power along with excellent drain efficiency of 65%. When operated under WCDMA modulation and 28 V-dc drain supply voltage, these devices produced 20 W of RF output power with a corresponding drain efficiency of 27% while achieving an adjacent channel power ratio (ACPR) of -39 dBc. A 36 mm device was tested in a DPD lincarizer under multi-carrier WCDMA modulation and achieved 20 dB of linearity improvement with 35% drain efficiency. Lastly, device reliability data is presented and shows extrapolated 20 year drift estimates of less than 1 dB for Psat.

引用

页码：483 / 486

页数：4

共 7 条

[1]

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[2]

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Johnson, JW ;

Piner, EL ;

Therrien, R ;

Rajagopal, P ;

Roberts, JC ;

Brown, JD ;

Singhal, S ;

Linthicum, KJ .

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[4]

Kikkawa T., 2004, 2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No.04CH37535), P1347, DOI 10.1109/MWSYM.2004.1338818

[5]

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