Back-to-back Schottky diodes: the generalization of the diode theory in analysis and extraction of electrical parameters of nanodevices

被引：135

作者：

Chiquito, Adenilson J. ^{[1
]}

Amorim, Cleber A. ^{[1
]}

Berengue, Olivia M. ^{[1
]}

Araujo, Luana S. ^{[1
]}

Bernardo, Eric P. ^{[1
]}

Leite, Edson R. ^{[2
]}

机构：

[1] Univ Fed Sao Carlos, Dept Fis, NanO LaB, BR-13565905 Sao Carlos, SP, Brazil

[2] Univ Fed Sao Carlos, Dept Quim, Lab Interdisciplinar Eletroquim & Ceram, BR-13565905 Sao Carlos, SP, Brazil

来源：

JOURNAL OF PHYSICS-CONDENSED MATTER | 2012年 / 24卷 / 22期

基金：

巴西圣保罗研究基金会;

关键词：

INTERFACE STATES; OXIDE NANOWIRE; BARRIER;

D O I：

10.1088/0953-8984/24/22/225303

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We report on the analysis of nonlinear current-voltage characteristics exhibited by a set of blocking metal/SnO2/metal. Schottky barrier heights in both interfaces were independently extracted and their dependence on the metal work function was analyzed. The disorder-induced interface states effectively pinned the Fermi level at the SnO2 surface, leading to the observed Schottky barriers. The model is useful for any two-terminal device which cannot be described by a conventional diode configuration.

引用

页数：7

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