Gas source MBE growth and characterization of TlInGaP and TlInGaAs layers for long wavelength applications

被引：28
作者：
Asahi, H
Koh, H
Takenaka, K
Asami, K
Oe, K
Gonda, S
机构：
[1] Osaka Univ, Inst Sci & Ind Res, Ibaraki, Osaka 567, Japan
[2] NTT, Optoelect Labs, Kanagawa 24301, Japan
来源：
JOURNAL OF CRYSTAL GROWTH | 1999年 / 201卷
基金：
日本学术振兴会;
关键词：
TlInGaP; TlInGaAs; gas source MBE; long wavelength optical device; temperature-insensitive wavelength laser diode; photoconductance; photoluminesce;
D O I：
10.1016/S0022-0248(98)01524-3
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
New III-V semiconductors TIInGaP and TIInGaAs (Tl composition of less than 0.1) are grown on InP substrates by gas source molecular beam epitaxy. They are proposed for long wavelength optical devices as well as temperature-insensitive wavelength laser diodes. Grown layers are characterized by the measurements on the temperature variation of photoconductance and photoluminescence. It is observed that the bandgap energy shows small-temperature variation suggesting the existence of temperature-independent bandgap energy in these material systems for the layers with increased Tl composition. (C) 1999 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：1069 / 1072
页数：4
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