Near-infrared semiconductor subwavelength-wire lasers

被引:122
作者
Chin, AH [1 ]
Vaddiraju, S
Maslov, AV
Ning, CZ
Sunkara, MK
Meyyappan, M
机构
[1] NASA, Ames Res Ctr, Ctr Nanotechnol, Moffett Field, CA 94035 USA
[2] Univ Louisville, Dept Chem Engn, Louisville, KY 40292 USA
关键词
D O I
10.1063/1.2198017
中图分类号
O59 [应用物理学];
学科分类号
摘要
We report near-infrared lasing in the telecommunications band in gallium antimonide semiconductor subwavelength wires. Our results open the possibility of the use of semiconductor subwavelength-wire lasers in future photonic integrated circuits for telecommunications applications. (c) 2006 American Institute of Physics.
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页数:3
相关论文
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