Ultrasmooth reaction-sintered silicon carbide surface resulting from combination of thermal oxidation and ceria slurry polishing

被引：16

作者：

Shen, Xinmin ^{[1
,2
]}

Dai, Yifan ^{[1
]}

Deng, Hui ^{[2
]}

Guan, Chaoliang ^{[1
]}

Yamamura, Kazuya ^{[2
]}

机构：

[1] Natl Univ Def Technol, Dept Mechatron Engn, Changsha 410073, Hunan, Peoples R China

[2] Osaka Univ, Res Ctr Ultra Precis Sci & Technol, Grad Sch Engn, Suita, Osaka 5650871, Japan

来源：

OPTICS EXPRESS | 2013年 / 21卷 / 12期

关键词：

DRY OXIDATION; GROWTH; MODEL; MICROSTRUCTURE; PARTICLES; MECHANISM; PRESSURE; REMOVAL; PLASMA; SI;

D O I：

10.1364/OE.21.014780

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

An ultrasmooth reaction-sintered silicon carbide surface with an rms roughness of 0.424 nm is obtained after thermal oxidation for 30 min followed by ceria slurry polishing for 30 min. By SEM-EDX analysis, we investigated the thermal oxidation behavior of RS-SiC, in which the main components are Si and SiC. As the oxidation rate is higher in the area with defects, there are no scratches or cracks on the surface after oxidation. However, a bumpy structure is formed after oxidation because the oxidation rates of Si and SiC differ. Through a theoretical analysis of thermal oxidation using the Deal-Grove model and the removal of the oxide layer by ceria slurry polishing in accordance with the Preston equation, a model for obtaining an ultrasmooth surface is proposed and the optimal processing conditions are presented. (C)2013 Optical Society of America

引用

页码：14780 / 14788

页数：9

共 17 条

[1] Mechanism analysis on finishing of reaction-sintered silicon carbide by combination of water vapor plasma oxidation and ceria slurry polishing
Shen, Xinmin
Tu, Qunzhang
Deng, Hui
Jiang, Guoliang
Yamamura, Kazuya
OPTICAL ENGINEERING, 2015, 54 (05)
[2] Efficient processing of reaction-sintered silicon carbide by anodically oxidation-assisted polishing
Tu, Qunzhang
Shen, Xinmin
Zhou, Jianzhao
He, Xiaohui
Yamamura, Kazuya
OPTICAL ENGINEERING, 2015, 54 (10)
[3] Comparative analysis of oxidation methods of reaction-sintered silicon carbide for optimization of oxidation-assisted polishing
Shen, Xinmin
Dai, Yifan
Deng, Hui
Guan, Chaoliang
Yamamura, Kazuya
OPTICS EXPRESS, 2013, 21 (22): : 26123 - 26135
[4] Comparative analysis on surface property in anodic oxidation polishing of reaction-sintered silicon carbide and single-crystal 4H silicon carbide
Shen, Xinmin
Tu, Qunzhang
Deng, Hui
Jiang, Guoliang
He, Xiaohui
Liu, Bin
Yamamura, Kazuya
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2016, 122 (04):
[5] Comparative analysis on surface property in anodic oxidation polishing of reaction-sintered silicon carbide and single-crystal 4H silicon carbide
Xinmin Shen
Qunzhang Tu
Hui Deng
Guoliang Jiang
Xiaohui He
Bin Liu
Kazuya Yamamura
Applied Physics A, 2016, 122
[6] Oxidation Characteristic and Machining Performance of Reaction-Sintered Silicon Carbide Ceramic in Anodically Oxidation-Assisted Polishing
Jiang, Guoliang
Shen, Xinmin
Tang, Jian
Zhang, Xiaonan
Zhang, Xiangpo
Yamamura, Kazuya
INTERNATIONAL JOURNAL OF ELECTROCHEMICAL SCIENCE, 2016, 11 (02): : 1512 - 1529
[7] OXIDATION-KINETICS OF REACTION-SINTERED SILICON-CARBIDE
CHAKRABARTI, OP
MUKERJI, J
BULLETIN OF MATERIALS SCIENCE, 1993, 16 (04) : 325 - 329
[8] Research on optimal process parameters in thermally oxidation-assisted polishing of reaction-sintered silicon carbide
Shen, Xinmin
Yamamura, Kazuya
Zhang, Xiaonan
Zhang, Xiangpo
Wang, Dong
Peng, Kang
ADVANCED OPTICAL MANUFACTURING TECHNOLOGIES, 2016, 9683
[9] Thermal oxidation polishing of pressureless sintered silicon carbide
Geng, Zhichao
Chen, Chenghao
Wang, Peizhi
Fang, Fengzhou
CERAMICS INTERNATIONAL, 2024, 50 (05) : 7860 - 7867
[10] THERMAL-DIFFUSIVITY OF REACTION-SINTERED SILICON-CARBIDE
SRINIVASAN, M
BENTSEN, LD
AMERICAN CERAMIC SOCIETY BULLETIN, 1981, 60 (03): : 381 - 381

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