Scanning Microwave Microscopy of Aluminum CMOS Interconnect Lines Buried in Oxide and Water

被引：0

作者：

Jin, Xin ^{[1
]}

Xiong, Kuanchen ^{[1
]}

Marstell, Roderick ^{[1
]}

Strandwitz, Nicholas C. ^{[1
]}

Hwang, James C. M. ^{[1
]}

Farina, Marco ^{[2
]}

Goeritz, Alexander ^{[3
]}

Wietstruck, Matthias ^{[3
]}

Kaynak, Mehmet ^{[3
]}

机构：

[1] Lehigh Univ, Bethlehem, PA 18015 USA

[2] Univ Politecn Marche, Dipartimento Ingn Informaz, I-60131 Ancona, Italy

[3] IHP, Technol Pk 25, D-15236 Frankfurt, Oder, Germany

来源：

2017 47TH EUROPEAN MICROWAVE CONFERENCE (EUMC) | 2017年

关键词：

Atomic force microscopy; biomedical imaging; high-resolution imaging; microwave imaging; nanostructures; scaning probe microscopy;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Using a scanning microwave microscope, we imaged in water aluminum interconnect lines buried in aluminum and silicon oxides fabricated through a state-of-the-art 0.13-mu m SiGe BiCMOS process. The results were compared with that obtained by using atomic force microscopy both in air and water. It was found the images in water was degraded by only approximately 60% from that in air.

引用

页码：975 / 977

页数：3

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