Sb-Se-based phase-change memory device with lower power and higher speed operations

被引：112

作者：

Yoon, Sung-Min ^{[1
]}

Lee, Nam-Yeal

Ryu, Sang-Ouk

Choi, Kyu-Jeong

Park, Young-Sam

Lee, Seung-Yun

Yu, Byoung-Gon

Kang, Myung-Jin

Choi, Se-Young

Wuttig, Matthis

机构：

[1] ETRI, Basic Res Lab, Taejon 305700, South Korea

[2] Yonsei Univ, Sch New Mat Sci & Engn, Seoul 120749, South Korea

[3] Rhein Westfal TH Aachen, Inst Phys, D-52056 Aachen, Germany

来源：

IEEE ELECTRON DEVICE LETTERS | 2006年 / 27卷 / 06期

关键词：

nonvolatile memory; phase-change random; access memory (PRAM); phase transition; Sb-Se alloy;

D O I：

10.1109/LED.2006.874130

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A phase-change material of Sb65Se35 was newly proposed for the nonvolatile memory applications. The fabricated phase-change memory device using Sb65Se35 showed a good electrical threshold switching characteristic in the dc current-voltage (I-V) measurement. The programming time for set operation of the memory device decreased from 1 mu s to 250 ns when Sb65Se35 was introduced in place of the conventionally employed Ge2Sb2Te5 (GST). The reset current of Sb65Se35 device also dramatically reduced from 15 mA to 1.6 mA, compared with that of GST device. These results are attributed to the low melting temperature and high crystallization speed of Sb65Se35 and will contribute to lower power and higher speed operations of a phase-change nonvolatile memory.

引用

页码：445 / 447

页数：3

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