Quantitative damage depth profiles in arsenic implanted HgCdTe

被引：20

作者：

Lobre, C. ^{[1
]}

Jalabert, D. ^{[2
]}

Vickridge, I. ^{[3
]}

Briand, E. ^{[3
]}

Benzeggouta, D. ^{[3
]}

Mollard, L. ^{[1
]}

Jouneau, P. H. ^{[2
]}

Ballet, P. ^{[1
]}

机构：

[1] CEA Leti, MINATEC, F-38054 Grenoble 9, France

[2] CEA INAC UJF Grenoble 1 UMR E, MINATEC, F-38054 Grenoble 9, France

[3] Univ Paris 06, Inst NanoSci Paris, UMR 7588, CNRS, Paris, France

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2013年 / 313卷

关键词：

HgCdTe; Ion implantation; Damage profiles; RBS-c; ION-IMPLANTATION; INDUCED DEFECTS; TEM; SI;

D O I：

10.1016/j.nimb.2013.07.019

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Rutherford backscattering experiments under channeling conditions (RBS-c) have been carried out on Hg0.77Cd0.23Te (MCT) layers implanted with arsenic. Accurate damage profiles have been extracted through a simple formalism for implanted and annealed layers. Quantitative damage profiles are correlated with structural defects observed by bright-field scanning transmission electron microscopy (BF-STEM) and chemical composition measured by secondary ion mass spectrometry (SIMS). Evolution of damage for increasing ion implantation fluence has been investigated by these three complementary techniques. Evidence is found of irradiation induced annealing during implantation. A fast damage recovery has been observed for post-implantation thermal anneals. In the case of an implanted layer annealed during 1 h, the damage profile, associated with arsenic concentration measurements, indicates the presence of complexes involving arsenic. (C) 2013 Elsevier B.V. All rights reserved.

引用

页码：76 / 80

页数：5

共 23 条

[1] Ar-implanted epitaxially grown HgCdTe:: evaluation of structural damage by RBS and TEM
Aguirre, MH
Cánepa, HR
[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2001, 175 : 274 - 279
[2] ASTLES MG, 1994, MERCURY CADMIUM TELL, P13
[3] STRUCTURE OF ION-IMPLANTED AND ANNEALED HG1-XCDXTE
BAHIR, G
KALISH, R
[J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (06) : 3129 - 3140
[4] Extended x-ray absorption fine structure study of arsenic in HgCdTe: p-type doping linked to nonsubstitutional As incorporation in an unknown AsHg8 structure
Biquard, X.
Alliot, I.
Ballet, P.
[J]. JOURNAL OF APPLIED PHYSICS, 2009, 106 (10)
[5] BUBULAC L, 1990, J CRYST GROWTH, V86, P723, DOI DOI 10.1016/0022-0248(90)90799-Q
[6] P ON N ION-IMPLANTED JUNCTIONS IN LIQUID-PHASE EPITAXY HGCDTE LAYERS ON CDTE SUBSTRATES
BUBULAC, LO
LO, DS
TENNANT, WE
EDWALL, DD
CHEN, JC
RATUSNIK, J
ROBINSON, JC
BOSTRUP, G
[J]. APPLIED PHYSICS LETTERS, 1987, 50 (22) : 1586 - 1588
[7] BEHAVIOR OF IMPLANTATION-INDUCED DEFECTS IN HGCDTE
BUBULAC, LO
TENNANT, WE
RIEDEL, RA
MAGEE, TJ
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (01): : 251 - 254
[8] CAPPER P, 2011, MERCURY CADMIUM TELL, P98
[9] USE OF RUTHERFORD BACKSCATTERING AND CHANNELING IN THE STUDY OF (HG,CD)TE
CONWAY, KL
GIBBONS, JF
SIGMON, TW
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (01): : 212 - 214
[10] ELECTRICAL DOPING OF HGCDTE BY ION-IMPLANTATION AND HEAT-TREATMENT
DESTEFANIS, GL
[J]. JOURNAL OF CRYSTAL GROWTH, 1988, 86 (1-4) : 700 - 722

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