PMMA Langmuir-Blodgett films inserted in a polymer light emitting diode to improve quantum efficiency

被引:2
|
作者
Kim, YE
Jung, SD
Park, H
Hwang, WY
Zyung, T
Shin, HS
Kang, IN
Shim, HK
Kim, JJ
机构
[1] KOREA ADV INST SCI & TECHNOL,DEPT CHEM,TAEJON 305701,SOUTH KOREA
[2] CHONNAM NATL UNIV,DEPT CHEM ENGN,CHONJU,SOUTH KOREA
关键词
D O I
10.1080/10587259708032263
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
PMMA Langmuir-Blodgett film is found to be an ideal insulating layer possessing good film forming ability with controllability of thickness in nanometer range and small number density of pinholes. Electroluminescence efficiency of a light emitting device is improved significantly when the several nanometer thick LB films are inserted in the device between an emitting layer and an aluminum cathode.
引用
收藏
页码:123 / 126
页数:4
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