A comprehensive model to predict the charging and reliability of capacitive RF MEMS switches

被引：177
作者：
van Spengen, WM
Puers, R
Mertens, R
De Wolf, I
机构：
[1] IMEC, B-3001 Louvain, Belgium
[2] Katholieke Univ Leuven, EE Dept, B-3001 Heverlee, Belgium
来源：
JOURNAL OF MICROMECHANICS AND MICROENGINEERING | 2004年 / 14卷 / 04期
关键词：
D O I：
10.1088/0960-1317/14/4/011
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Reliability issues currently hamper the commercialization of capacitive RF MEMS switches. The most important failure mode is parasitic charging of the dielectric of such devices. In this paper we present an improved analytical model that enables us to calculate and understand the effect of insulator charging on the behavior of capacitive RF MEMS switches, and to describe the way they fail, and their reliability. Emphasis is placed oil a shift of the pull-out voltage to predict failures. Tests with capacitive RF MEMS switches have been performed that validate the most important features of the model.
引用
收藏
页码：514 / 521
页数：8
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