Thickness-Dependent Electrical Transport Properties of Graphene

被引：8

作者：

Thiyagarajan, Kaliannan ^{[1
]}

Saravanakumar, Balasubramaniam ^{[1
]}

Mohan, Rajneesh ^{[1
]}

Kim, Sang-Jae ^{[1
]}

机构：

[1] Jeju Natl Univ, Dept Mechatron Engn, Nanomat & Syst Lab, Cheju 690756, South Korea

来源：

SCIENCE OF ADVANCED MATERIALS | 2013年 / 5卷 / 06期

基金：

新加坡国家研究基金会;

关键词：

Graphene; Thickness or Layers; Photolithography; Electrical Transport Measurement; Transition; FEW-LAYER GRAPHENE; RAMAN-SPECTROSCOPY; FILMS; TRANSPARENT; DEPOSITION; GRAPHITE; SIO2;

D O I：

10.1166/sam.2013.1485

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We have studied the resistance of a graphene sample as a function of flake thickness. The graphene sample thickness ranged from sub-nanometer (similar to 0.65 nm) to few tens of nanometer (similar to 50 nnn) with active channel area in several mu m(2). The electrical transport phenomenon of the fabricated graphene device shows a metallic to semiconductor transition with respect to sample thickness. The c-axis characteristic (semiconducting to metallic) was observed only in few layer graphene. The obtained result clearly indicates that the resistance of ideal, defect-free graphene samples is sensitive to the number of graphene layers.

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页码：542 / 548

页数：7

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