Strain relaxation by pitting in AlN thin films deposited by metalorganic chemical vapor deposition

被引：43

作者：

Bryan, I. ^{[1
]}

Rice, A. ^{[1
]}

Hussey, L. ^{[1
]}

Bryan, Z. ^{[1
]}

Bobea, M. ^{[1
]}

Mita, S. ^{[2
]}

Xie, J. ^{[2
]}

Kirste, R. ^{[1
]}

Collazo, R. ^{[1
]}

Sitar, Z. ^{[1
]}

机构：

[1] N Carolina State Univ, Dept Mat Sci & Engn, Raleigh, NC 27695 USA

[2] Hexatech Inc, Morrisville, NC 27560 USA

来源：

APPLIED PHYSICS LETTERS | 2013年 / 102卷 / 06期

关键词：

SEEDED GROWTH; HOMOEPITAXIAL ALN; SI(001); LAYERS; GE; TRANSPORT; CRYSTALS; GAN;

D O I：

10.1063/1.4792694

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Strain relaxation mechanisms were investigated in epitaxial AlN layers deposited on (0001)-oriented AlN substrates by metalorganic chemical vapor deposition. It was revealed that epitaxial AlN layers under tensile strain can exhibit micro-cracks and nano-pits. A correlation existed between the amount of strain and number of pits in localized areas. Pit densities as high as 10(10) cm(-2) were observed in areas where the tensile strain reached similar to 0.4%, while unstrained areas of the film showed step flow growth. These nano-pits occurred as a strain relaxation mechanism and were not related to intrinsic defects, such as threading dislocations or inversion domains. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4792694]

引用

页数：4

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