Reversible change in electrical and optical properties in epitaxially grown Al-doped ZnO thin films

被引：28

作者：

Noh, Jun Hong ^{[1
]}

Jung, Hyun Suk ^{[2
]}

Lee, Jung-Kun ^{[3
]}

Kim, Jin Young ^{[4
]}

Cho, Chin Moo ^{[1
]}

An, Jae-sul ^{[1
]}

Hong, Kug Sun ^{[1
]}

机构：

[1] Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 151742, South Korea

[2] Kookmin Univ, Sch Adv Mat Engn, Seoul 136702, South Korea

[3] Univ Pittsburgh, Dept Mech Engn & Mat Sci, Pittsburgh, PA 15260 USA

[4] Natl Renewable Energy Lab, Chem & Biosci Ctr, Golden, CO 80401 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2008年 / 104卷 / 07期

关键词：

D O I：

10.1063/1.2987472

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Aluminum-doped ZnO (AZO) films were epitaxially grown on sapphire (0001) substrates using pulsed laser deposition. As-deposited AZO films had a low resistivity of 8.01x10(-4) Omega cm. However, after annealing at 450 degrees C in air, the electrical resistivity of the AZO films increased to 1.97x10(-1) Omega cm because of a decrease in the carrier concentration. Subsequent annealing of the air-annealed AZO films in H-2 recovered the electrical conductivity of the AZO films. In addition, the conductivity change was reversible upon repeated air and H-2 annealing. A photoluminescence study showed that oxygen interstitial (O-i(')) is a critical material parameter allowing for the reversible control of the electrical conducting properties of AZO films. (C) 2008 American Institute of Physics. [DOI: 10.1063/1.2987472]

引用

页数：5

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