Numerical study of AgInTe2solar cells using SCAPS

The ternary (ABX2) semiconductors have wide optical band gaps range and motilities of carrier, has led to their appearance importance device materials, including solar cells of photovoltaic and light-emitting diodes. In accordance with this, AgInTe(2)solar cells have proved to be the next big advancement in the field of solar energy. In this work, different numerical simulations were performed using SCAPS. The doping density and layer thickness are investigated under solar illumination of AM1.5 for optimised performance of solar cell. Thus, starting fromJ-Vcurves, we have calculated the short-circuit current densityJ(sc), the open-circuit voltageV(oc), the fill factor and the efficiency conversion. This structure can also provide a fundamental solar cell unit for developing very high efficiency solar cell.