The effect of size distribution on photoluminescence of excited states from InAs/GaAs quantum dots

被引：7
作者：
Tang, NY [1 ]
Chen, XS [1 ]
Lu, W [1 ]
机构：
[1] Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, Shanghai 200083, Peoples R China
来源：
ACTA PHYSICA SINICA | 2005年 / 54卷 / 12期
关键词：
quantum dot; size distribution; excited states;
D O I：
10.7498/aps.54.5855
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
We have used the effective mass approximation to calculate the effect of size non-uniformity on the width of photoluminescence (PL) emission peaks of the quantum dots (QDs). In order to investigate the variation in PL inhomogeneity of the energy levels, we have calculated the effects of small changes of the structural parameters on the energy spectrum. Theoretical calculations have shown that different size distributions effect differently on the width of the ground and excited states of QD. The distribution of height, as well as the diameter and the volume, appears to be the key parameter that controls the effective potentials in the vertical and lateral directions, and these two potentials change the sharpness of all PL peaks. This causes the line width of the higher energy levels to be either broader or sharper than that of the ground state, or in certain cases to be equal to the line width of the ground state.
引用
收藏
页码：5855 / 5860
页数：6
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