Design and experimental study of the high uniformity semiconductor linear laser light source

被引：1

作者：

Yao, Shun ^{[1
]}

Zhang, Hongmei ^{[1
]}

Liu, Youqiang ^{[1
]}

Yu, Hongyan ^{[1
]}

Guan, Jiaoyang ^{[1
]}

机构：

[1] Beijing Univ Technol, Inst Laser Engn, Beijing 100124, Peoples R China

来源：

THIRD INTERNATIONAL CONFERENCE ON PHOTONICS AND OPTICAL ENGINEERING | 2019年 / 11052卷

关键词：

Semiconductor laser; Powell lens; Linear laser light source; Spot uniformity;

D O I：

10.1117/12.2521914

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

In order to meet the requirements of the new laser radar and laser active lighting for the miniaturized line light source, a linear laser light source that can be transmitted over long distances has been successfully designed and prepared. This linear laser light source is based on 808nm semiconductor laser. Firstly, a set of orthogonal placement plano-convex aspherical lens is used for collimating the laser beam of gauss distribution, thus the parallel beams that can be transmitted over long distances is obtained, and then through the Powell prism. Finally, the semiconductor laser is shaped into a laser light source with the slender and uniform intensity distribution. And we also have carried out an example design simulation with the Zemax optical design software and built an experimental system, and a laser light source has been successfully prepared with the divergence angles 54 degrees of the fast directions and the uniformity 23.5% of the linear spot. The experimental results can match the Zemax simulation results well, which proves that the design method in this article is correct, simple and useful.

引用

页数：8